1999. 12. 29 1/1 semiconductor technical data bcw29/30 epitaxial planar pnp transistor revision no : 1 general purpose application. switching application. features complementary to bcw31/32 maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) * : package mounted on 99.9% alumina 10 8 0.6mm. marking lot no. c1 type name lot no. c2 type name bcw29 bcw30 characteristic symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current i c -100 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -65 150 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =-10 a -30 - - v collector-emitter breakdown voltage v (br)ceo i c =-2ma -20 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a -5 - - v collector cut-off current i cbo v cb =-30v - - -100 na emitter cut-off current i ebo v eb =-5v - - -100 na dc current gain bcw29 h fe v ce =-5v, i c =-2ma 110 - 220 bcw30 200 - 450 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-0.5ma - - -0.25 v base-emitter on voltage v be(on) v ce =-5v, i c =-2ma -0.55 - -0.7 v collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 4 pf noise figure nf v ce =-5v, i c =-0.2ma r s =2k , f=1khz - - 10 db
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